Випрямні та фотоелектричні властивості поверхнево-бар’єрних структур, отриманих термообробкою монокристалів Cu1-xZnxInSе2

Abstract

У роботі отримані поверхнево-бар’єрні структури на основі монокристалів твердого розчину n-Cu1- xZnxInSe2 (х=0−20). Досліджено вольт-амперні характеристики та фотоелектричні властивості структур In2О3/n- Cu1-xZnxInSе2. Обговорено механізми проходження електричного струму через In2О3/n-Cu1-xZnxInSе2 та особливості їх спектрального розподілу фотонапруги.; In this work photosensitive structure on CuInSe2–ZnIn2Se4 solid solution single crystals with n-type of conductivity has been produced and studied. Photosensitive surface-barrier structures were produced by heat-treatment of monocrystalline n-Cu1-xZnxInSe2 (х=0−20) plates in air at temperatures near 550 °C for t≈25 min. Then the crystals were cooled down to room temperature at a rate of 300 K/min. As a result, on the CuInSe2–ZnIn2Se4 plates homogeneously colored layers of purple were formed. After heat treatment the formed layers were removed from all sides except one. Studies of the stationary current-voltage characteristics have shown that surface-barrier structures have rectifying properties. Rectification coefficient was in the range of ~2 to 7. Best rectifying properties are typical for the structures based on CuInSe2–ZnIn2Se4 with 10–15 mol. % ZnIn2Se4. When illuminated using integral light of halogen lamp, photovoltaic effect was observed. The photosensitivity of the best structures reached Su≈4 V/W at T≈300 K.